This paper, reviews recent trends in MOSFET scaling such as the aggressive scaling of gate length, the decrease in on-current with scaling, and the increased demand for a variety of transistor types for use in a wide range of target products. To keep up with these trends, there are many device and process issues that need to be resolved. The paper has categorized these issues and developed new technologies for 90 nm-node transistors. The paper has fabricated a 90 nm-node transistor with a high on-current and a 40 nm gate length, which is the shortest gate length reported so far for 90 nm transistors.
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