Moore's Law, which states that the number of transistors on integrated circuits doubles every processor generation, is the foundation for the exponential growth of computing power and component integration at reduced cost. Current leakage and power dissipation issues associated with the traditional Silicon diOxide (SiO2) CMOS transistor gate dielectric impose practical limits on the extensibility of Moore's Law. After several years of effort, the Intel technology team has made a major breakthrough that solves the chip power problem. Intel has identified a new material known as "High-K" to replace SiO2 as the gate dielectric, in addition to new metals to replace the polysilicon gate electrode of Negative polarity Metal Oxide Semiconductor (NMOS) and Positive polarity Metal Oxide Semiconductors (PMOS) transistors.
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