| Publisher | Institute of Electrical and Electronics Engineers | ||
|---|---|---|---|
| Format | 246.4KB PDF | Date added | 18 Dec 2003 |
| Topics | TDMA - CDMA, GSM, Mobile - Wireless Communications | ||
| Downloads | 76 | ||
A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS1800, PCS1900, and UTRA/FDD WCDMA, applications is described in this paper. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm2.
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