| Publisher | Ultratech Stepper | ||
|---|---|---|---|
| Format | 1.9MB PDF, requires Acrobat Rdr 5 | Date added | 21 Jul 1999 |
| Topics | Semiconductor Tech. - Manufacturing | ||
| Downloads | 33 | ||
This paper will evaluate the performance of a novel low numerical aperture (NA), broadband g, h and i-line exposure system with thick photoresist processes and compare the results to baseline 50 µm and 100 µm photoresist processes exposed with narrower bands of the Mercury (Hg) arc lamp. The unique stepper used for this series of tests exposes photoresists using the full Hg vapor spectrum output from 350 nm to 450 nm and allows rapid exposure of broadband photoresists as well as g and i-line specific photoresists. Aspects of reduction photolithography equipment design have historically been optimized for use with thin photoresists for maximum resolution. The higher NA and narrow band illumination sources in these systems tends to degrade performance with thick photoresists and larger features. The new three-wavelength system uses a combination of low NA with maximum wafer plane irradiance to achieve well formed images in thick photoresist and provides a high throughput for an advantageous cost of ownership.
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